{"title":"28nm FD-SOI技术中射频能量收集的Dickson整流器设计","authors":"M. Awad, P. Benech, J. Duchamp","doi":"10.1109/ULIS.2018.8354751","DOIUrl":null,"url":null,"abstract":"In the context of the radio frequency energy harvesting, RF-DC converter based on a one stage Dickson voltage rectifier has been studied and realized in 28 nm FD-SOI technology. After the analysis of the operating constraints of the circuit, a choice was made on the N-low threshold voltage transistor (NLVT). Moreover, the back gate polarization (BGP) effect, on circuit performance, has been analyzed and a dynamic BGP is proposed which improve rectifier performance.","PeriodicalId":383788,"journal":{"name":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","volume":"53 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Design of Dickson rectifier for RF energy harvesting in 28 nm FD-SOI technology\",\"authors\":\"M. Awad, P. Benech, J. Duchamp\",\"doi\":\"10.1109/ULIS.2018.8354751\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the context of the radio frequency energy harvesting, RF-DC converter based on a one stage Dickson voltage rectifier has been studied and realized in 28 nm FD-SOI technology. After the analysis of the operating constraints of the circuit, a choice was made on the N-low threshold voltage transistor (NLVT). Moreover, the back gate polarization (BGP) effect, on circuit performance, has been analyzed and a dynamic BGP is proposed which improve rectifier performance.\",\"PeriodicalId\":383788,\"journal\":{\"name\":\"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)\",\"volume\":\"53 6\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2018.8354751\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2018.8354751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of Dickson rectifier for RF energy harvesting in 28 nm FD-SOI technology
In the context of the radio frequency energy harvesting, RF-DC converter based on a one stage Dickson voltage rectifier has been studied and realized in 28 nm FD-SOI technology. After the analysis of the operating constraints of the circuit, a choice was made on the N-low threshold voltage transistor (NLVT). Moreover, the back gate polarization (BGP) effect, on circuit performance, has been analyzed and a dynamic BGP is proposed which improve rectifier performance.