薄膜表面形貌的AFM研究:误切角和生长温度对薄膜表面形貌的影响

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492291

V. Souliere, V. Thevenot, H. Dumont, Y. Monteil, J. Bouix, P. Regreny, T. Duc

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引用次数: 0

摘要

我们的目的是研究InP的MOVPE生长机制。我们重点研究了原子力显微镜(AFM)观察到的表面形貌。已知生长条件如热处理、生长温度或V/III比对生长机制和表面形貌有很大影响。我们介绍了用原子力显微镜研究的邻近和高度定向的InP表面的生长机制的最新结果。

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AFM study of surface topography of InP epilayers: effect of miscut angle and growth temperature during MOVPE

Our objective is the investigation of MOVPE growth mechanisms for InP. We focused on the surface topography observed by Atomic Force Microscopy (AFM). It is known that growth conditions such as thermal annealing, growth temperature or V/III ratio have a strong influence on growth mechanisms and surface topography. We present recent results on growth mechanisms on vicinal and highly misoriented InP surfaces studied by AFM.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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