{"title":"超低功耗，高PSRR CMOS负反馈基准电压","authors":"Yanhan Zeng, Yu-Ao Liu, Xin Zhang, Hongzhou Tan","doi":"10.1049/iet-cds.2016.0452","DOIUrl":null,"url":null,"abstract":"Based on negative feedback technique, a complementary metal-oxide semiconductor (CMOS) voltage reference with ultra-low-power, low supply voltage and high-power supply rejection ratio (PSRR) is proposed and simulated using a 0.18 standard micrometre CMOS technology. The operating supply voltage ranges from 0.85 V to 2.5 V and the temperature ranges from -20°C to 80°C. The voltage reference can achieve a temperature coefficient of 16.3 ppm/°C and line sensitivity as low as 0.086 ppm/V, without the use of resistors or special devices, consuming 202 nA current at 27°C. Besides, the PSRR is only -113 dB at 1 Hz, -64 dB at 1 kHz, respectively.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":"2 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Ultra-low-power, high PSRR CMOS voltage reference with negative feedback\",\"authors\":\"Yanhan Zeng, Yu-Ao Liu, Xin Zhang, Hongzhou Tan\",\"doi\":\"10.1049/iet-cds.2016.0452\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on negative feedback technique, a complementary metal-oxide semiconductor (CMOS) voltage reference with ultra-low-power, low supply voltage and high-power supply rejection ratio (PSRR) is proposed and simulated using a 0.18 standard micrometre CMOS technology. The operating supply voltage ranges from 0.85 V to 2.5 V and the temperature ranges from -20°C to 80°C. The voltage reference can achieve a temperature coefficient of 16.3 ppm/°C and line sensitivity as low as 0.086 ppm/V, without the use of resistors or special devices, consuming 202 nA current at 27°C. Besides, the PSRR is only -113 dB at 1 Hz, -64 dB at 1 kHz, respectively.\",\"PeriodicalId\":120076,\"journal\":{\"name\":\"IET Circuits Devices Syst.\",\"volume\":\"2 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IET Circuits Devices Syst.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/iet-cds.2016.0452\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Circuits Devices Syst.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/iet-cds.2016.0452","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
基于负反馈技术，提出了一种超低功耗、低电源电压和高电源抑制比(PSRR)的互补金属氧化物半导体(CMOS)基准电压，并采用0.18标准微米CMOS技术进行了仿真。工作电压范围:0.85 V ~ 2.5 V，工作温度范围:-20℃~ 80℃。该基准电压可实现16.3 ppm/°C的温度系数和低至0.086 ppm/V的线路灵敏度，无需使用电阻或特殊器件，在27°C下消耗202na电流。此外，PSRR在1hz时仅为-113 dB，在1khz时为-64 dB。
Ultra-low-power, high PSRR CMOS voltage reference with negative feedback
Based on negative feedback technique, a complementary metal-oxide semiconductor (CMOS) voltage reference with ultra-low-power, low supply voltage and high-power supply rejection ratio (PSRR) is proposed and simulated using a 0.18 standard micrometre CMOS technology. The operating supply voltage ranges from 0.85 V to 2.5 V and the temperature ranges from -20°C to 80°C. The voltage reference can achieve a temperature coefficient of 16.3 ppm/°C and line sensitivity as low as 0.086 ppm/V, without the use of resistors or special devices, consuming 202 nA current at 27°C. Besides, the PSRR is only -113 dB at 1 Hz, -64 dB at 1 kHz, respectively.
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