{"title":"高数字电压可扩展的4位闪存ADC","authors":"Ashima Gupta, Anil Singh, A. Agarwal","doi":"10.1049/iet-cds.2018.5148","DOIUrl":null,"url":null,"abstract":"This study describes the highly-digital 4-bit 200 MS flash analogue to digital converter (ADC) whose major part can be digitally synthesised thus achieving low power, reducing the time-to-market and is scalable with technology. The comparators used in the ADC consist of complementary metal-oxide-semiconductor (CMOS)-based inverter and NAND-NOR as standard cells. The complete flash ADC is designed in 180 nm CMOS technology with 1.8 V supply with the power consumption of 4.51 mW. The signal-to-noise and distortion ratio, signal-to-noise ratio and spurious-free dynamic range are equal to 23.3, 25.2 and 30.1 dB. It provides an effective number of bits equal to 3.5. The differential non-linearity (DNL) of this ADC is ± 0.25 LSB and integral non-linearity (INL) is + 0.6 LSB.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Highly-digital voltage scalable 4-bit flash ADC\",\"authors\":\"Ashima Gupta, Anil Singh, A. Agarwal\",\"doi\":\"10.1049/iet-cds.2018.5148\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study describes the highly-digital 4-bit 200 MS flash analogue to digital converter (ADC) whose major part can be digitally synthesised thus achieving low power, reducing the time-to-market and is scalable with technology. The comparators used in the ADC consist of complementary metal-oxide-semiconductor (CMOS)-based inverter and NAND-NOR as standard cells. The complete flash ADC is designed in 180 nm CMOS technology with 1.8 V supply with the power consumption of 4.51 mW. The signal-to-noise and distortion ratio, signal-to-noise ratio and spurious-free dynamic range are equal to 23.3, 25.2 and 30.1 dB. It provides an effective number of bits equal to 3.5. The differential non-linearity (DNL) of this ADC is ± 0.25 LSB and integral non-linearity (INL) is + 0.6 LSB.\",\"PeriodicalId\":120076,\"journal\":{\"name\":\"IET Circuits Devices Syst.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IET Circuits Devices Syst.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/iet-cds.2018.5148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Circuits Devices Syst.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/iet-cds.2018.5148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This study describes the highly-digital 4-bit 200 MS flash analogue to digital converter (ADC) whose major part can be digitally synthesised thus achieving low power, reducing the time-to-market and is scalable with technology. The comparators used in the ADC consist of complementary metal-oxide-semiconductor (CMOS)-based inverter and NAND-NOR as standard cells. The complete flash ADC is designed in 180 nm CMOS technology with 1.8 V supply with the power consumption of 4.51 mW. The signal-to-noise and distortion ratio, signal-to-noise ratio and spurious-free dynamic range are equal to 23.3, 25.2 and 30.1 dB. It provides an effective number of bits equal to 3.5. The differential non-linearity (DNL) of this ADC is ± 0.25 LSB and integral non-linearity (INL) is + 0.6 LSB.