高数字电压可扩展的4位闪存ADC

Ashima Gupta, Anil Singh, A. Agarwal
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引用次数: 12

摘要

本研究描述了高数字4位200 MS闪存模拟数字转换器(ADC),其主要部分可以数字合成,从而实现低功耗,缩短上市时间,并具有技术可扩展性。ADC中使用的比较器由基于互补金属氧化物半导体(CMOS)的逆变器和NAND-NOR作为标准单元组成。完整的闪存ADC采用180nm CMOS技术设计,1.8 V电源,功耗为4.51 mW。信噪比和失真比、信噪比和无杂散动态范围分别为23.3、25.2和30.1 dB。它提供的有效位数等于3.5。该ADC的微分非线性(DNL)为±0.25 LSB,积分非线性(INL)为+ 0.6 LSB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Highly-digital voltage scalable 4-bit flash ADC
This study describes the highly-digital 4-bit 200 MS flash analogue to digital converter (ADC) whose major part can be digitally synthesised thus achieving low power, reducing the time-to-market and is scalable with technology. The comparators used in the ADC consist of complementary metal-oxide-semiconductor (CMOS)-based inverter and NAND-NOR as standard cells. The complete flash ADC is designed in 180 nm CMOS technology with 1.8 V supply with the power consumption of 4.51 mW. The signal-to-noise and distortion ratio, signal-to-noise ratio and spurious-free dynamic range are equal to 23.3, 25.2 and 30.1 dB. It provides an effective number of bits equal to 3.5. The differential non-linearity (DNL) of this ADC is ± 0.25 LSB and integral non-linearity (INL) is + 0.6 LSB.
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