绝缘子上硅隧道场效应管的简单解析模型

2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI:10.1109/CODEC.2012.6509256

S. Kanungo, H. Rahaman, P. Gupta, P. Dasgupta

{"title":"绝缘子上硅隧道场效应管的简单解析模型","authors":"S. Kanungo, H. Rahaman, P. Gupta, P. Dasgupta","doi":"10.1109/CODEC.2012.6509256","DOIUrl":null,"url":null,"abstract":"An analytical model for the 2D potential distribution in sub-threshold regime of operation of a SOI TFET structure under the assumption of a sinusoidal potential distribution in the direction perpendicular to the gate in the middle portion of the channel is developed. Role of any charge on the channel potential is neglected. The model predicts the transfer characteristics of the device with reasonable accuracy.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A simple analytical model of silicon on insulator tunnel FET\",\"authors\":\"S. Kanungo, H. Rahaman, P. Gupta, P. Dasgupta\",\"doi\":\"10.1109/CODEC.2012.6509256\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical model for the 2D potential distribution in sub-threshold regime of operation of a SOI TFET structure under the assumption of a sinusoidal potential distribution in the direction perpendicular to the gate in the middle portion of the channel is developed. Role of any charge on the channel potential is neglected. The model predicts the transfer characteristics of the device with reasonable accuracy.\",\"PeriodicalId\":399616,\"journal\":{\"name\":\"2012 5th International Conference on Computers and Devices for Communication (CODEC)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 5th International Conference on Computers and Devices for Communication (CODEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CODEC.2012.6509256\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CODEC.2012.6509256","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

本文建立了SOI TFET结构在亚阈值状态下的二维电势分布解析模型，该模型假设电势分布在通道中部垂直栅极方向呈正弦分布。忽略任何电荷对通道电位的作用。该模型以合理的精度预测了装置的传递特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A simple analytical model of silicon on insulator tunnel FET

An analytical model for the 2D potential distribution in sub-threshold regime of operation of a SOI TFET structure under the assumption of a sinusoidal potential distribution in the direction perpendicular to the gate in the middle portion of the channel is developed. Role of any charge on the channel potential is neglected. The model predicts the transfer characteristics of the device with reasonable accuracy.

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来源期刊

2012 5th International Conference on Computers and Devices for Communication (CODEC)

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