16Mb分割门闪存与改进的进程窗口

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090570

J. Yater, M. Suhail, S. Kang, J. Shen, C. Hong, T. Merchant, R. Rao, H. Gasquet, K. Loiko, B. Winstead, S. Williams, M. Rossow, W. Malloch, R. Syzdek, G. Chindalore

{"title":"16Mb分割门闪存与改进的进程窗口","authors":"J. Yater, M. Suhail, S. Kang, J. Shen, C. Hong, T. Merchant, R. Rao, H. Gasquet, K. Loiko, B. Winstead, S. Williams, M. Rossow, W. Malloch, R. Syzdek, G. Chindalore","doi":"10.1109/IMW.2009.5090570","DOIUrl":null,"url":null,"abstract":"This paper reports on recent bitcell optimizations that improve drive current and program performance. The 16 Mb and 32 Mb array results are best to-date for nanocrystal memories and suggest a robust, reliable array operation.","PeriodicalId":113507,"journal":{"name":"2009 IEEE International Memory Workshop","volume":"422 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"16Mb Split Gate Flash Memory with Improved Process Window\",\"authors\":\"J. Yater, M. Suhail, S. Kang, J. Shen, C. Hong, T. Merchant, R. Rao, H. Gasquet, K. Loiko, B. Winstead, S. Williams, M. Rossow, W. Malloch, R. Syzdek, G. Chindalore\",\"doi\":\"10.1109/IMW.2009.5090570\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on recent bitcell optimizations that improve drive current and program performance. The 16 Mb and 32 Mb array results are best to-date for nanocrystal memories and suggest a robust, reliable array operation.\",\"PeriodicalId\":113507,\"journal\":{\"name\":\"2009 IEEE International Memory Workshop\",\"volume\":\"422 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Memory Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2009.5090570\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2009.5090570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文报告了最近的位单元优化，提高了驱动电流和程序性能。16mb和32mb的阵列结果是迄今为止纳米晶存储器中最好的，表明了一种强大、可靠的阵列操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

16Mb Split Gate Flash Memory with Improved Process Window

This paper reports on recent bitcell optimizations that improve drive current and program performance. The 16 Mb and 32 Mb array results are best to-date for nanocrystal memories and suggest a robust, reliable array operation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 IEEE International Memory Workshop

自引率

0.00%

发文量