封装植入电子器件可靠性的贝叶斯论证

C. Lamont, Federico Mazza, N. Donaldson
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引用次数: 3

摘要

植入医疗器械的长期性能受到其包装材料的严重影响。传统的密封外壳是小型化的障碍,这可以通过聚合物封装来避免。然而,这种方法对于慢性种植体仍有许多不确定性。在许多高度可靠的设备实际失效之前,很难从任意测试结构上进行的寿命试验中提取意义。在这项研究中,我们描述了一种加速老化实验,该实验采用硅封装0.35 μm CMOS技术制造的测试结构。样品在恒定的5V直流偏置下在47、67和87°C下老化。经过300多天的老化,在36个测试样品中,只有4个出现了故障。三个故障归因于与测量系统的互连,其余故障是由于硅密封剂在导线上分层造成的。通过对接近零故障数据的贝叶斯可靠性分析,我们证明了在87°C老化时CMOS组件大于92天的第一个故障百分位数,在95%的置信水平下计算,大约相当于在37°C下超过8年。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Bayesian Demonstration of Reliability for Encapsulated Implanted Electronics
The long term performance of implanted medical devices is critically affected by their packaging materials. Traditional hermetic enclosures are a hindrance to miniaturisation which might be avoided by polymer encapsulation. However, much uncertainty remains regarding such an approach for chronic implants. It is difficult to extract meaning from lifetime experiments performed on arbitrary test structures and before many highly reliable devices have actually failed. In this study, we describe an accelerated aging experiment on devices that employ test structures fabricated on a silicone encapsulated 0.35 μm CMOS technology. Samples are aged at 47, 67 and 87 °C under a constant 5V DC bias. After over 300 days of aging, of the 36 samples under test, there have only been four failures. Three failures are attributed to the interconnect to the measurement system, with the remaining failure due to delamination of the silicone encapsulant over wirebonds. By employing a Bayesian reliability analysis of the near-zero failure data we demonstrate a 1st failure percentile for the CMOS components of greater than 92 days when aged at 87 °C, calculated at a 95% confidence level, which approximately corresponds to over 8 years at 37 °C.
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