验证STT-MRAM在15 nm MTJ电池热稳定性不损失的情况下的极端可扩展性

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894366

Ju Hyun Kim, W. C. Lim, U. Pi, J. Lee, W. Kim, J. H. Kim, K. Kim, Y. Park, S. H. Park, M. A. Kang, Y. Kim, W. Kim, S. Kim, J. Park, S. C. Lee, Y. J. Lee, J. Yoon, S. C. Oh, S. O. Park, S. Jeong, S. Nam, H. K. Kang, E. Jung

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引用次数: 23

摘要

接口驱动的垂直磁各向异性(i-PMA)磁隧道结(MTJs)的可扩展性已提高到1X节点，这验证了STT-MRAM在未来独立存储器中的应用。通过开发一种新的无损伤MTJ图像化工艺，可以实现i-PMA MTJ电池在15 nm节点下的鲁棒磁性和电学性能。

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Verification on the extreme scalability of STT-MRAM without loss of thermal stability below 15 nm MTJ cell

Scalability of interface driven perpendicular magnetic anisotropy (i-PMA) magnetic tunnel junctions (MTJs) has been improved down to 1X node which verifies STT-MRAM for future standalone memory. With developing a novel damage-less MTJ patterning process, robust magnetic and electrical performances of i-PMA MTJ cell down to 15 nm node could be achieved.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

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