深亚微米DRAM技术中的互连策略

J. Wee, Si-Hong Kim, YongKeun Park, Sejun Kim, Jin-Yong Chung
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引用次数: 0

摘要

本文讨论了深亚微米技术中互连的相关问题和一般方法。首先,讨论了互连库的生成问题,包括仿真和测量。其次,分析了库生成工具的相关问题,包括设计前期和设计后期的寄生提取工具。第三,重点讨论了设计自动化问题,包括芯片布局规划、互连缓冲优化器、互连路由优化器等。最后讨论了我们在DRAM技术中的方法。由于层次化的设计理念、性能、成本、设计周期等因素,这些与互连相关的产品与存储器和逻辑器件等芯片系列相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interconnect strategy in deep-submicron DRAM technology
This paper discusses the interconnect-related issues and general approaches in deep submicron technology. First, issues on interconnect library generation including simulations and measurements are discussed. Second, issues related to library-generating tools, which include parasitics extracting tools for early design stage and post-design stage, are analyzed. Third, issues are focused on design automation including chip floorplanner, interconnect-buffer optimizer, interconnect routing optimizer and so on. Finally we discuss our approach in DRAM technology. These interconnect-related items are relevant to chip families such as memory and logic device owing to hierarchical design concept, performance, cost, design-turn around times and so on.
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