单一事件干扰免疫与近期记忆制造过程的关系

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858579

N. Nemoto, H. Shindou, S. Kuboyama, H. Itoh, S. Matsuda, S. Okada, I. Nashiyama

{"title":"单一事件干扰免疫与近期记忆制造过程的关系","authors":"N. Nemoto, H. Shindou, S. Kuboyama, H. Itoh, S. Matsuda, S. Okada, I. Nashiyama","doi":"10.1109/RADECS.1999.858579","DOIUrl":null,"url":null,"abstract":"Single-Event Upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU rate and structures/fabrication processes. In this experiment, single-ion Multiple-Bit Upsets (MBUs) in 4 Mbit SRAM, 16 Mbit DRAM and 64 Mbit DRAM were observed. These MBUs were also discussed.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Relationship between single-event upset immunity and fabrication processes of recent memories\",\"authors\":\"N. Nemoto, H. Shindou, S. Kuboyama, H. Itoh, S. Matsuda, S. Okada, I. Nashiyama\",\"doi\":\"10.1109/RADECS.1999.858579\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-Event Upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU rate and structures/fabrication processes. In this experiment, single-ion Multiple-Bit Upsets (MBUs) in 4 Mbit SRAM, 16 Mbit DRAM and 64 Mbit DRAM were observed. These MBUs were also discussed.\",\"PeriodicalId\":135784,\"journal\":{\"name\":\"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1999.858579\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1999.858579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

通过高能重离子辐照试验，评价了商用设备的单事件扰动(SEU)抗扰性。我们展示了测试结果，并描述了观察到的SEU率与结构/制造工艺之间的关系。本实验观察了4mbit SRAM、16mbit DRAM和64mbit DRAM中的单离子多比特扰动(MBUs)。对这些MBUs也进行了讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Relationship between single-event upset immunity and fabrication processes of recent memories

Single-Event Upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU rate and structures/fabrication processes. In this experiment, single-ion Multiple-Bit Upsets (MBUs) in 4 Mbit SRAM, 16 Mbit DRAM and 64 Mbit DRAM were observed. These MBUs were also discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

自引率

0.00%

发文量