Zheng Sun, Xiao Xu, Xin Yang, T. Shibata, T. Yoshimasu
{"title":"0.03mm2高度平衡的平衡IC，用于毫米波应用在180纳米CMOS","authors":"Zheng Sun, Xiao Xu, Xin Yang, T. Shibata, T. Yoshimasu","doi":"10.1109/RFIT.2014.6933244","DOIUrl":null,"url":null,"abstract":"A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.","PeriodicalId":281858,"journal":{"name":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS\",\"authors\":\"Zheng Sun, Xiao Xu, Xin Yang, T. Shibata, T. Yoshimasu\",\"doi\":\"10.1109/RFIT.2014.6933244\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.\",\"PeriodicalId\":281858,\"journal\":{\"name\":\"2014 IEEE International Symposium on Radio-Frequency Integration Technology\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Symposium on Radio-Frequency Integration Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2014.6933244\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2014.6933244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS
A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.
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