基于AVS/ABB/偏置存储器阵列闭环调节的汽车级Cortex-R4F SoC

R. Gomez, E. Bano, A. Cathelin, S. Clerc
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引用次数: 2

摘要

我们在28nm FD-SOI中提出了一种汽车级ARM¯Cortex -R4F核心SoC,通过结合自适应电压缩放(AVS)、自适应体偏置(ABB)和内存偏置阵列(BiMA),优化了其在11倍频率范围内的运行性能点(opp)上的能量;带有3mV/bit可调复制电路(TRC),用于安全性,嵌入式电源调节和补偿。所报道的技术分别将低功耗、中功耗和高性能opp的性能提高了21倍,VMIN降低了120mV,寿命提高了8倍。在极端条件下测量了结果,包括SS/TT/FF工艺,0.5/1.2V, - 40/150°C和EOL时效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Performance-Flexible Energy-Optimized Automotive-Grade Cortex-R4F SoC through Combined AVS/ABB/Bias-in-Memory-Array Closed-Loop Regulation in 28nm FD-SOI
We propose an automotive-grade ARM¯ Cortex¯-R4F core SoC in 28nm FD-SOI that optimizes its energy across 11X frequency-wide Operational Performance Points (OPPs) by combining Adaptive Voltage Scaling (AVS), Adaptive Body-Biasing (ABB) and Bias-in-Memory-Array (BiMA); with a 3mV/bit Tunable Replica Circuit (TRC) for safety, embedded power regulation and compensation. The reported techniques respectively improve by, 21X performance, 120mV lower VMIN , and 8X lifetime, the Low-Power, Mid-, and High-Performance OPPs. Results have been measured at extreme conditions, covering SS/TT/FF process, 0.5/1.2V, −40/150°C, and EOL aging.
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