在MOCVD中使用Ge缓冲层在Si(001)衬底上外延生长InP

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10102975

Keun Wook Shin, Sang-Moon Lee, Kiyoung Lee, E. Yoon

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引用次数: 0

摘要

在本研究中，我们在Si(001)衬底上生长了带有Ge缓冲层的InP异质外延层。结果表明，通过调整Ge缓冲层，可以使InP层表面光滑。此外，抑制InP中的平面缺陷导致结晶度和光学性能得到改善，尽管螺纹位错增加。我们的研究提出了III-V和Ge结合的可能性，为未来的CMOS技术。

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Heteroepitaxial InP growth on a Si(001) substrate using a Ge buffer layer in MOCVD

In this study, we grew InP heteroepitaxial layers on Si(001) substrates with Ge buffer layers. We found out that surface of InP layer was smoothened by adjusting Ge buffer layer. In addition, the suppression of planar defects in InP leaded to the improved crystallinity and optical properties, in spite of the increased threading dislocations. Our study suggested the possibility of combination of III-V and Ge for the future CMOS technologies.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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