基于独立后门的3D堆叠InGaAs-OI/SGOI线沟道mosfet的终极CMOS演示

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894395

T. Irisawa, K. Ikeda, Y. Moriyama, M. Oda, E. Mieda, T. Maeda, T. Tezuka

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引用次数: 28

摘要

采用顺序三维集成的方法，成功制备了由高迁移率线通道InGaAs-OI nmosfet和SGOI pmosfet组成的终极CMOS结构。本文报道了性能良好的CMOS逆变器和InGaAs/SiGe (Ge)双通道CMOS环形振荡器的首次演示。借助自适应后门偏置、VBG控制，在低至0.37 V的Vdd下实现了21级CMOS环形振荡器的工作。

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Demonstration of ultimate CMOS based on 3D stacked InGaAs-OI/SGOI wire channel MOSFETs with independent back gate

An ultimate CMOS structure composed of high mobility wire channel InGaAs-OI nMOSFETs and SGOI pMOSFETs has been successfully fabricated by means of sequential 3D integration. Well behaved CMOS inverters and first demonstration of InGaAs/SiGe (Ge) dual channel CMOS ring oscillators are reported. The 21-stage CMOS ring oscillator operation was achieved at Vdd as low as 0.37 V with the help of adaptive back gate bias, VBG control.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量