锑和砷离子注入对超高压器件高性能的影响

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628068

V. V. Vasantha Kumar, M. Manjunatha, V. Suresh, Shao-Ming Yang, G. Sheu, P. A. Chen

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引用次数: 1

摘要

本文提出了一种低成本的创新双通道工程来模拟砷和锑注入对超高压器件击穿电压和状态电阻的影响。市场上有许多具有多种传导路径的器件，但这些器件都使用高能植入物。但是我们在P-top上使用了低成本和低能量的植入物来形成额外的传导路径。通过改变P-top和Ntop在P-top上的变化，进行优化以获得高击穿电压和较低的Ron。我们展示了在P-top上注入锑和砷的界面电荷分析，并研究了NDrift扩散前后N-top注入对击穿电压的影响。

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Effects of antimony and arsenic ion implantation on high performance of ultra high voltage device

This paper presents a low cost innovative dual channel engineering to simulate the effects of arsenic and antimony implantation over breakdown voltage and on state resistance of an Ultra High Voltage (UHV) device. There are many devices in market with multiple conduction paths, but all these devices use high energy implants. But we have used a low cost and low energy implant over P-top to form an extra conduction path. Optimizations are done to obtain high breakdown voltage and lower Ron by varying the P-top and Ntop over P-top. We demonstrate interface charge analysis for both Antimony and Arsenic implantation over P-top and also we investigate the effect of N-top implantation before and after NDrift diffusion on breakdown voltage.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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