v型凹槽图案InP上InGaAs量子线的制备与表征

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773744

T. Schrimpf, Dirk Piester, H. Wehmann, P. Bonsch, D. Wullner, A. Schlachetzki, C. Mendorf, H. Lakner

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引用次数: 2

摘要

我们报道了在v型凹槽图案InP衬底上InGaAs量子阱(QWL)和量子线(QWR)的表征。讨论了不同样品制备方法下凹槽间表面QWL的质量。确定了这些QWL的材料组成和厚度。利用原子力显微镜(AFM)测量了v型槽尖端量子阱的几何形状，并与透射电子显微镜(TEM)进行了比较。研究了QWR光致发光(PL)与样品温度的关系。

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Preparation and characterization of InGaAs quantum wires on V-groove patterned InP

We report on the characterization of InGaAs quantum wells (QWL) and wires (QWR) on V-groove patterned InP substrates. The quality of the QWL on the (100)-surface between the grooves is discussed concerning different sample preparation methods. The material composition and the thickness of these QWL is determined. The geometrical shape of the QWR in the tip of the V-grooves is measured by atomic-force microscopy (AFM) and compared with transmission-electron microscopy (TEM). The dependence of the QWR photoluminescence (PL) on sample temperature is studied.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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