非合金金属在碳控制半绝缘砷化镓晶体上的漏电流

Y. Otoki, M. Sahara, S. Takahashi, S. Kuma, M. Onishi, M. Kashiwa
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引用次数: 0

摘要

采用不同对n型(AuGe,含合金)、非合金(Au)和p型(AuZn,含合金)电极,研究了碳控半绝缘GaAs晶体的漏电现象。在两种情况下观察到大的泄漏电流:非合金电极或p型电极与n型电极的对面施加正电压。这种泄漏与决定半绝缘性能的碳浓度无关。非合金电极的性能与p型电极非常相似。考虑到电极附近的带弯曲,提出了一个可以解释所有结果的模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Leakage current from non-alloyed metal on carbon controlled semi-insulating GaAs crystals
Leakage of carbon-controlled semi-insulating GaAs crystals was investigated using various pairs of n-type (AuGe, with alloying), non-alloyed (Au) and p-type (AuZn, with alloying) electrodes. Large leakage currents were observed under two conditions: when positive voltage was applied to non-alloyed or p-type electrode with opposite-side electrode of n-type. This leakage had no relation to carbon concentration which determine the semi-insulating properties. Properties of the non-alloyed electrode were found to be very similar to those of p-type electrode. A model is proposed which can explain all the results, taking into account band-bending near the electrode.
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