P. Malcovati, C. Leme, R. Lenggenhager, F. Maloberti, H. Baltes
{"title":"用于热电集成红外传感器的低噪声多速率SC读出电路","authors":"P. Malcovati, C. Leme, R. Lenggenhager, F. Maloberti, H. Baltes","doi":"10.1109/IMTC.1994.352011","DOIUrl":null,"url":null,"abstract":"In this paper we present a switched capacitor multirate read-out circuit for thermoelectric infrared sensors integrated on chip. The target application is a passive intrusion detector. The signal generated by the sensor in this particular application is quite small (few tens of /spl mu/V) and has a narrow bandwidth (0.1+10 Hz). It must be amplified (keeping the noise level as low as possible) and band pass filtered. An auto-zeroed low-noise transconductance stage transforms the sensor output voltage in a current, which is applied to a multirate switched capacitor integrator, performing the signal processing. A prototype was integrated in a 1.2 /spl mu/m CMOS technology. Simulation and experimental results are reported.<<ETX>>","PeriodicalId":231484,"journal":{"name":"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Low noise multirate SC read-out circuitry for thermoelectric integrated infrared sensors\",\"authors\":\"P. Malcovati, C. Leme, R. Lenggenhager, F. Maloberti, H. Baltes\",\"doi\":\"10.1109/IMTC.1994.352011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a switched capacitor multirate read-out circuit for thermoelectric infrared sensors integrated on chip. The target application is a passive intrusion detector. The signal generated by the sensor in this particular application is quite small (few tens of /spl mu/V) and has a narrow bandwidth (0.1+10 Hz). It must be amplified (keeping the noise level as low as possible) and band pass filtered. An auto-zeroed low-noise transconductance stage transforms the sensor output voltage in a current, which is applied to a multirate switched capacitor integrator, performing the signal processing. A prototype was integrated in a 1.2 /spl mu/m CMOS technology. Simulation and experimental results are reported.<<ETX>>\",\"PeriodicalId\":231484,\"journal\":{\"name\":\"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMTC.1994.352011\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMTC.1994.352011","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper we present a switched capacitor multirate read-out circuit for thermoelectric infrared sensors integrated on chip. The target application is a passive intrusion detector. The signal generated by the sensor in this particular application is quite small (few tens of /spl mu/V) and has a narrow bandwidth (0.1+10 Hz). It must be amplified (keeping the noise level as low as possible) and band pass filtered. An auto-zeroed low-noise transconductance stage transforms the sensor output voltage in a current, which is applied to a multirate switched capacitor integrator, performing the signal processing. A prototype was integrated in a 1.2 /spl mu/m CMOS technology. Simulation and experimental results are reported.<>