{"title":"晶圆上CMOS器件的等离子体诱导极性相关热载子响应","authors":"V. Janapaty, B. Bhava, S. Kerns, N. Bui","doi":"10.1109/IRWS.1997.660273","DOIUrl":null,"url":null,"abstract":"In this study, plasma-processed devices are subjected to hot-carrier stressing experiments to evaluate the reliability across the wafer. Devices with N/sup +/-P, P/sup +/-N, both N/sup +/-P and P/sup +/-N diodes, and no protection diode, are used to establish the nature of the injection (gate and substrate) conditions across the wafer. Results show that P-channel devices subjected to gate injection during plasma processing show higher degradation than those subjected to substrate injection. N-MOSFETs subjected to gate injection during plasma processing show a higher antenna ratio dependence than those subjected to substrate injection. Also, a linear relationship is observed between the pre-stress trapped positive charge in the oxide and threshold voltage shift after hot-carrier stress. Gate injection during plasma processes creates higher trapped positive charge and hence the hot-carrier lifetime of devices subjected to gate injection can be significantly lower than that of devices subjected to substrate injection.","PeriodicalId":193522,"journal":{"name":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Plasma-induced polarity dependent hot-carrier response of CMOS devices across a wafer\",\"authors\":\"V. Janapaty, B. Bhava, S. Kerns, N. Bui\",\"doi\":\"10.1109/IRWS.1997.660273\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, plasma-processed devices are subjected to hot-carrier stressing experiments to evaluate the reliability across the wafer. Devices with N/sup +/-P, P/sup +/-N, both N/sup +/-P and P/sup +/-N diodes, and no protection diode, are used to establish the nature of the injection (gate and substrate) conditions across the wafer. Results show that P-channel devices subjected to gate injection during plasma processing show higher degradation than those subjected to substrate injection. N-MOSFETs subjected to gate injection during plasma processing show a higher antenna ratio dependence than those subjected to substrate injection. Also, a linear relationship is observed between the pre-stress trapped positive charge in the oxide and threshold voltage shift after hot-carrier stress. Gate injection during plasma processes creates higher trapped positive charge and hence the hot-carrier lifetime of devices subjected to gate injection can be significantly lower than that of devices subjected to substrate injection.\",\"PeriodicalId\":193522,\"journal\":{\"name\":\"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.1997.660273\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1997.660273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma-induced polarity dependent hot-carrier response of CMOS devices across a wafer
In this study, plasma-processed devices are subjected to hot-carrier stressing experiments to evaluate the reliability across the wafer. Devices with N/sup +/-P, P/sup +/-N, both N/sup +/-P and P/sup +/-N diodes, and no protection diode, are used to establish the nature of the injection (gate and substrate) conditions across the wafer. Results show that P-channel devices subjected to gate injection during plasma processing show higher degradation than those subjected to substrate injection. N-MOSFETs subjected to gate injection during plasma processing show a higher antenna ratio dependence than those subjected to substrate injection. Also, a linear relationship is observed between the pre-stress trapped positive charge in the oxide and threshold voltage shift after hot-carrier stress. Gate injection during plasma processes creates higher trapped positive charge and hence the hot-carrier lifetime of devices subjected to gate injection can be significantly lower than that of devices subjected to substrate injection.