一种抗环境光的SPAD深度传感器:像素缩放的重要性以及在940nm处具有21.8% PDE的2.5μm像素的演示

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI:10.1109/IEDM45625.2022.10019414

S. Shimada, Y. Otake, S. Yoshida, Y. Jibiki, M. Fujii, S. Endo, R. Nakamura, H. Tsugawa, Y. Fujisaki, K. Yokochi, J. Iwase, K. Takabayashi, H. Maeda, K. Sugihara, K. Yamamoto, M. Ono, K. Ishibashi, S. Matsumoto, H. Hiyama, T. Wakano

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引用次数: 5

摘要

我们提出了按比例缩小的单光子雪崩二极管(SPAD)像素，以防止在高环境光下光子探测效率(PDE)的下降。本研究是在使用CMOS 300mm平台制造的3.3、3.0和2.5μm像素间距的背照(BI) 3d堆叠SPAD阵列传感器上进行的。为了实现像素缩放，开发的像素引入了亚微米雪崩区域，以防止过早的边缘击穿，同时允许低暗计数率(DCR)。此外，优化后的光学透镜可以缩小像素，达到大约100%的填充系数，从而将λ=940nm处的PDE提高到20%以上，即使在阳光条件下也是如此。即使在具有挑战性的环境光条件下，这些传感器也能提供经济高效、高精度的深度传感能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A SPAD Depth Sensor Robust Against Ambient Light: The Importance of Pixel Scaling and Demonstration of a 2.5μm Pixel with 21.8% PDE at 940nm

We present scaled down Single Photon Avalanche Diode (SPAD) pixels to prevent Photon Detection Efficiency (PDE) degradation under high ambient light. This study is carried out on Back-Illuminated (BI) 3D-stacked SPAD array sensors with 3.3, 3.0, and 2.5μm pixel pitches fabricated using a CMOS 300mm platform. To achieve pixel scaling, the developed pixels introduce a sub-micron avalanche region to prevent premature edge breakdown while allowing for a low Dark Count Rate (DCR). Moreover, optimized optical lenses enable scaled down pixels to achieve approximately 100% fill factor, thereby boosting the PDE at λ=940nm beyond 20%, even under sunlight conditions. These sensors offer cost-efficient and high accuracy depth-sensing capabilities, even under challenging ambient light conditions.

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来源期刊

2022 International Electron Devices Meeting (IEDM)

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