自热特性及其在技术开发中的应用

P. Paliwoda, M. Toledano-Luque, T. Nigam, F. Guarín, M. Nour, S. Cimino, L. Pantisano, A. Gupta, Oscar Huerta-Gonzalez, M. Hauser, W. Liu, A. Vayshenker, D. Ioannou, D. Lee, L. Jiang, P. Yee, S. Rauch, B. Min
{"title":"自热特性及其在技术开发中的应用","authors":"P. Paliwoda, M. Toledano-Luque, T. Nigam, F. Guarín, M. Nour, S. Cimino, L. Pantisano, A. Gupta, Oscar Huerta-Gonzalez, M. Hauser, W. Liu, A. Vayshenker, D. Ioannou, D. Lee, L. Jiang, P. Yee, S. Rauch, B. Min","doi":"10.1109/NATW49237.2020.9153081","DOIUrl":null,"url":null,"abstract":"This work presents various device self-heating temperature sensing techniques and discusses their application in device reliability projection. Details of sensor design, technology choice, layout and ambient temperature impact on measurement results are discussed. The sensors produce excellent results which were confirmed through TCAD thermal simulation. Self-heating was studied by varying the number of fins per active region and proximity of sensor to heater was investigated. While most data presented here is on FinFET technology the learning and measurement techniques are applicable to planar technologies. Front-end-of-line (FEOL) reliability mechanism, hot carrier injection (HCI) was studied to show that self-heating effects can impact measurement results and recommendations are given on how to mitigate them. Self-heating is also studied for logic circuits by utilizing ring oscillators with several densities and stage counts to show that self-heating is considerably lower compared to constant voltage stress conditions conducted on discrete structures.","PeriodicalId":147604,"journal":{"name":"2020 IEEE 29th North Atlantic Test Workshop (NATW)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Self-heating characterization and its applications in technology development\",\"authors\":\"P. Paliwoda, M. Toledano-Luque, T. Nigam, F. Guarín, M. Nour, S. Cimino, L. Pantisano, A. Gupta, Oscar Huerta-Gonzalez, M. Hauser, W. Liu, A. Vayshenker, D. Ioannou, D. Lee, L. Jiang, P. Yee, S. Rauch, B. Min\",\"doi\":\"10.1109/NATW49237.2020.9153081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents various device self-heating temperature sensing techniques and discusses their application in device reliability projection. Details of sensor design, technology choice, layout and ambient temperature impact on measurement results are discussed. The sensors produce excellent results which were confirmed through TCAD thermal simulation. Self-heating was studied by varying the number of fins per active region and proximity of sensor to heater was investigated. While most data presented here is on FinFET technology the learning and measurement techniques are applicable to planar technologies. Front-end-of-line (FEOL) reliability mechanism, hot carrier injection (HCI) was studied to show that self-heating effects can impact measurement results and recommendations are given on how to mitigate them. Self-heating is also studied for logic circuits by utilizing ring oscillators with several densities and stage counts to show that self-heating is considerably lower compared to constant voltage stress conditions conducted on discrete structures.\",\"PeriodicalId\":147604,\"journal\":{\"name\":\"2020 IEEE 29th North Atlantic Test Workshop (NATW)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 29th North Atlantic Test Workshop (NATW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NATW49237.2020.9153081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 29th North Atlantic Test Workshop (NATW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NATW49237.2020.9153081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文介绍了各种器件自热感温技术,并讨论了它们在器件可靠性预测中的应用。详细讨论了传感器的设计、技术选择、布局和环境温度对测量结果的影响。通过TCAD热仿真验证了传感器的性能。通过改变每个有源区域的翅片数量来研究自热,并研究了传感器与加热器的接近程度。虽然这里提供的大多数数据是关于FinFET技术的,但学习和测量技术适用于平面技术。研究了前端线(FEOL)可靠性机制、热载流子注入(HCI)的自热效应对测量结果的影响,并提出了减轻自热效应的建议。通过使用具有多个密度和级数的环形振荡器对逻辑电路的自加热进行了研究,表明与在离散结构上进行的恒电压应力条件相比,自加热要低得多。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-heating characterization and its applications in technology development
This work presents various device self-heating temperature sensing techniques and discusses their application in device reliability projection. Details of sensor design, technology choice, layout and ambient temperature impact on measurement results are discussed. The sensors produce excellent results which were confirmed through TCAD thermal simulation. Self-heating was studied by varying the number of fins per active region and proximity of sensor to heater was investigated. While most data presented here is on FinFET technology the learning and measurement techniques are applicable to planar technologies. Front-end-of-line (FEOL) reliability mechanism, hot carrier injection (HCI) was studied to show that self-heating effects can impact measurement results and recommendations are given on how to mitigate them. Self-heating is also studied for logic circuits by utilizing ring oscillators with several densities and stage counts to show that self-heating is considerably lower compared to constant voltage stress conditions conducted on discrete structures.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信