基于测试缺陷诊断的晶圆级测试路径模式识别与测试特性

Ken Chau-Cheung Cheng, Katherine Shu-Min Li, Andrew Yi-Ann Huang, Ji-Wei Li, L. Chen, Nova Cheng-Yen Tsai, Sying-Jyan Wang, Chen-Shiun Lee, Leon Chou, Peter Yi-Yu Liao, Hsing-Chung Liang, Jwu E. Chen
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引用次数: 2

摘要

晶圆缺陷图提供了制造和测试过程缺陷的宝贵信息,因此它们可以作为提高制造和测试良率的有价值的来源。本文应用基于人工智能的模式识别技术来区分晶圆厂缺陷和测试缺陷。从而提高测试质量、可靠性和良率。晶圆测试数据包含有关自动测试设备测试配置的现场相关信息,包括有效负载推力、探头与负载板之间的间隙、探头尖端尺寸、探头清洗应力等。我们的方法分析了测试路径和与站点相关的测试特征,以识别测试引起的缺陷。实验结果表明,对6种恩智浦产品的预测准确率达到96.83%,表明本文方法的有效性和高效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer-Level Test Path Pattern Recognition and Test Characteristics for Test-Induced Defect Diagnosis
Wafer defect maps provide precious information of fabrication and test process defects, so they can be used as valuable sources to improve fabrication and test yield. This paper applies artificial intelligence based pattern recognition techniques to distinguish fab-induced defects from test-induced ones. As a result, test quality, reliability and yield could be improved accordingly. Wafer test data contain site-dependent information regarding test configurations in automatic test equipment, including effective load push force, gap between probe and load-board, probe tip size, probe-cleaning stress, etc. Our method analyzes both the test paths and site-dependent test characteristics to identify test-induced defects. Experimental results achieve 96.83% prediction accuracy of six NXP products, which show that our methods are both effective and efficient.
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