M. Fisher, Y.-Z. Huang, A. J. Dann, D. Elton, M. Harlow, S. Perrin, J. Reed, I. Reid, H. Wickes, M. Adams
{"title":"1.5 μm垂直腔面发射激光器","authors":"M. Fisher, Y.-Z. Huang, A. J. Dann, D. Elton, M. Harlow, S. Perrin, J. Reed, I. Reid, H. Wickes, M. Adams","doi":"10.1364/slada.1995.tud.2","DOIUrl":null,"url":null,"abstract":"VCSELs emitting in the 1.3 and 1.55 μm regions could be particularly useful as low cost sources for optical fibre telecommunications applications because mode-matched devices can be coupled to single-mode fibres with high efficiency and good alignment tolerance. The absence of cleaved facets also permits on-wafer characterisation of devices.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1.5 μm Vertical-Cavity Surface-Emitting Lasers\",\"authors\":\"M. Fisher, Y.-Z. Huang, A. J. Dann, D. Elton, M. Harlow, S. Perrin, J. Reed, I. Reid, H. Wickes, M. Adams\",\"doi\":\"10.1364/slada.1995.tud.2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"VCSELs emitting in the 1.3 and 1.55 μm regions could be particularly useful as low cost sources for optical fibre telecommunications applications because mode-matched devices can be coupled to single-mode fibres with high efficiency and good alignment tolerance. The absence of cleaved facets also permits on-wafer characterisation of devices.\",\"PeriodicalId\":365685,\"journal\":{\"name\":\"Semiconductor Lasers Advanced Devices and Applications\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Lasers Advanced Devices and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/slada.1995.tud.2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Lasers Advanced Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/slada.1995.tud.2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
VCSELs emitting in the 1.3 and 1.55 μm regions could be particularly useful as low cost sources for optical fibre telecommunications applications because mode-matched devices can be coupled to single-mode fibres with high efficiency and good alignment tolerance. The absence of cleaved facets also permits on-wafer characterisation of devices.
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