多晶硅-发射极晶体管中小发射极效应的建模

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1992-10-07 DOI:10.1109/BIPOL.1992.274067

L. Wagner, K.M. Kim, P. Nguyen, M. J. Saccamango, B. Cunningham, K. DeVries, S. Ratanaphanyarat, S. Fischer, J. Snare, A. Lucchese, P. Strugazow, P. Peressini, S. Chu, R. Knepper

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引用次数: 0

摘要

砷遮蔽是影响双极多晶硅发射极晶体管小发射极效应的重要因素，利用二维工艺和器件建模工具对其进行了模拟。结果与传统和外延基多晶硅发射极技术的数据进行了比较。还考虑了影响基极电流的其他参数。分析表明，利用模拟工具可以对砷遮蔽效应的基本特征进行建模和解释。这些模拟结果表明，在更先进的外延基器件中，小发射极效应仍然存在。

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Modeling the small-emitter effect in polysilicon-emitter transistors

Arsenic shadowing, which is an important consideration for the small-emitter effect in bipolar polysilicon-emitter transistors, was simulated using two-dimensional process and device modeling tools. Results are compared with data for conventional and epi-base polysilicon-emitter technologies. Consideration is also given to other parameters that affect the base current. This analysis shows that the principle features of the arsenic shadowing effect can be modeled and explained by using the simulation tools. These simulations showed that the small-emitter effect was still present in the more advanced epi-base devices.<>

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Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting

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