用于毫米波高线性放大器的梯度通道氮化镓hemt

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972753

N. Venkatesan, Gerardo Silva-Oelker, P. Fay

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引用次数: 4

摘要

低噪声放大器的线性度对高性能毫米波系统至关重要。虽然基于GaN的hemt具有出色的生存能力和噪声系数，但传统的AlGaN/GaN器件设计仅表现出适度的线性。梯度通道结构的使用有望将线性系数OIP3/PDC提高到20db或更高。我们报告了进一步提高线性性能的仿真研究。通过将非线性沟道成分分级与多晶体管并联进行三阶跨导抵消相结合，预测线性分级沟道器件的线性值将在实验证明的基础上进一步提高7 dB。

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Graded-Channel GaN-Based HEMTs for High Linearity Amplifiers at Millimeter-Wave

Linearity in low-noise amplifiers is critical for high-performance mm-wave systems. While GaN-based HEMTs offer excellent survivability and noise figure, conventional AlGaN/GaN device designs exhibit only modest linearity. The use of graded-channel structures is promising for increasing the linearity figure of merit, OIP3/PDC, to 20 dB or more. We report simulation studies for further enhancement in linearity performance. By combining non-linear channel compositional grading with the parallel connection of multiple transistors for third-order transconductance cancellation, a further increase of 7 dB in linearity figure of merit beyond that experimentally demonstrated for linearly-graded channel devices is projected.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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