首先看看使用非接触式、基于性能的计量的跨芯片性能变化

M. Babazadeh, J. Estabil, B. Borot, G. Johnson, N. Pakdaman, W. Doedel, J. Vickers, G. Steinbrueck, J. Galvier
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引用次数: 2

摘要

我们报告了嵌入式环形振荡器的首次非接触、非破坏性性能测量。早在金属1时就在模具活动区域内进行测量。这项工作采用了90nm逻辑CMOS技术。我们测量了与晶圆均匀性不同或相反意义上的剩余跨场性能变化。这种效应不能从测量结果中推断出来
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First Look at Across-chip Performance Variation Using Non-Contact, Performance-Based Metrology
We report on the first non-contact, non-destructive performance measurements of embedded ring oscillators. Measurements are made on inside the die active area as early as metal 1. A 90nm logic CMOS technology was used for this work. We have measured residual across-field performance variation separate from and of opposite sense to wafer uniformity. This effect cannot be extrapolated from scribe measurements
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