纳米硅片晶体管的自热效应研究

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-06 DOI:10.1109/EDSSC.2018.8487097

G. Chalia, R. Hegde

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引用次数: 4

摘要

通过单通道、多通道NSFET与单通道FinFET的比较，研究了自热效应(SHE)对横向栅极-全方位(GAA)纳米片FET (NSFET)的影响。TCAD结果显示，与具有相同占地面积和相似OFF-current $(\mathrm {{I}_{ON}})_{\，}$值的FinFET相比，NSFET的ON-电流$(\mathrm {{I}_{OFF}})_{{}$值的FinFET的ON-电流$(\mathrm {{I}})_{}$值下降了1.8%。此外，通过研究几何尺度对SHE的影响，我们得出结论，与FinFET相比，NSFET对SHE表现出更好的弹性。

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Study of Self-Heating Effects in Silicon Nano-Sheet Transistors

The impact of Self-Heating Effect (SHE) on lateral Gate-All-Around (GAA) Nanosheet FET (NSFET) is numerically investigated by comparison of single and multi-channel NSFET with a single-channel FinFET. TCAD results show a 1.8% degradation in ON-current $(\mathrm {{I} _{ON}})_{\, }$for a NSFET in comparison to 2.4% for a FinFET with identical footprint and similar OFF-current $( \mathrm {{I}_{OFF}})_{}$ values. Furthermore, by investigating the effect of geometry scaling on SHE, we conclude that NSFET exhibits better resilience to SHE in comparison to the FinFET.

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2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

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