{"title":"金属氧化物半导体结构的教学模拟","authors":"H. Magrez, K. Kassmi, A. Ziyyat","doi":"10.1109/ICM.2009.5418626","DOIUrl":null,"url":null,"abstract":"In this paper, we present an interactive simulation of a Metal-Oxide-Semiconductor structure, based on a qualitative approach. The code is written in ActionScript / Flash to enjoy all the benefits of this technology in the multimedia field. In addition, our simulation combines theoretical and practical concepts on the same graphical interface: it shows the impact of physical and electrical parameters on the behavior of a MOS structure or a transistor TMOS. Moreover, it provides the physical reasons of the parameters influence that can serve to evaluate the relevance of approximations commonly used. This simulation is applied in engineering education.","PeriodicalId":391668,"journal":{"name":"2009 International Conference on Microelectronics - ICM","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Didactic simulation of a metal oxide semiconductor structure\",\"authors\":\"H. Magrez, K. Kassmi, A. Ziyyat\",\"doi\":\"10.1109/ICM.2009.5418626\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present an interactive simulation of a Metal-Oxide-Semiconductor structure, based on a qualitative approach. The code is written in ActionScript / Flash to enjoy all the benefits of this technology in the multimedia field. In addition, our simulation combines theoretical and practical concepts on the same graphical interface: it shows the impact of physical and electrical parameters on the behavior of a MOS structure or a transistor TMOS. Moreover, it provides the physical reasons of the parameters influence that can serve to evaluate the relevance of approximations commonly used. This simulation is applied in engineering education.\",\"PeriodicalId\":391668,\"journal\":{\"name\":\"2009 International Conference on Microelectronics - ICM\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Microelectronics - ICM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2009.5418626\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Microelectronics - ICM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2009.5418626","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Didactic simulation of a metal oxide semiconductor structure
In this paper, we present an interactive simulation of a Metal-Oxide-Semiconductor structure, based on a qualitative approach. The code is written in ActionScript / Flash to enjoy all the benefits of this technology in the multimedia field. In addition, our simulation combines theoretical and practical concepts on the same graphical interface: it shows the impact of physical and electrical parameters on the behavior of a MOS structure or a transistor TMOS. Moreover, it provides the physical reasons of the parameters influence that can serve to evaluate the relevance of approximations commonly used. This simulation is applied in engineering education.
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