{"title":"等离子体肖特基光电器件的研究","authors":"A. Sellai","doi":"10.1109/PN.2019.8819524","DOIUrl":null,"url":null,"abstract":"Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.","PeriodicalId":448071,"journal":{"name":"2019 Photonics North (PN)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the Plasmonic Schottky Photovoltaic Devices\",\"authors\":\"A. Sellai\",\"doi\":\"10.1109/PN.2019.8819524\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.\",\"PeriodicalId\":448071,\"journal\":{\"name\":\"2019 Photonics North (PN)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Photonics North (PN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PN.2019.8819524\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Photonics North (PN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PN.2019.8819524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.
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