{"title":"采用0.18 μm CMOS工艺的多频带全集成高线性功率放大器，适用于LTE应用","authors":"Tsung-Ying Wu, Jeng-Rern Yang","doi":"10.1109/ISOCC.2017.8368814","DOIUrl":null,"url":null,"abstract":"This paper presents a multiband high-linearity power amplifier (PA) for long-term evolution (LTE) applications at 1.8/2.1/2.3/2.5/2.6 GHz in the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm 1P6M CMOS process. The proposed PA includes a switch, which is a CMOS varactor, a driver stage, which is a CMOS resistor inverter, and a power stage, which uses a cascode structure and feedback technique. The fully integrated PA delivers 21-dBm output power in the overall band for a 50-Ω load with an average power gain of 22.98 dB.","PeriodicalId":248826,"journal":{"name":"2017 International SoC Design Conference (ISOCC)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A multiband fully integrated high-linearity power amplifier using a 0.18-μm CMOS process for LTE applications\",\"authors\":\"Tsung-Ying Wu, Jeng-Rern Yang\",\"doi\":\"10.1109/ISOCC.2017.8368814\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a multiband high-linearity power amplifier (PA) for long-term evolution (LTE) applications at 1.8/2.1/2.3/2.5/2.6 GHz in the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm 1P6M CMOS process. The proposed PA includes a switch, which is a CMOS varactor, a driver stage, which is a CMOS resistor inverter, and a power stage, which uses a cascode structure and feedback technique. The fully integrated PA delivers 21-dBm output power in the overall band for a 50-Ω load with an average power gain of 22.98 dB.\",\"PeriodicalId\":248826,\"journal\":{\"name\":\"2017 International SoC Design Conference (ISOCC)\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International SoC Design Conference (ISOCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISOCC.2017.8368814\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC.2017.8368814","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A multiband fully integrated high-linearity power amplifier using a 0.18-μm CMOS process for LTE applications
This paper presents a multiband high-linearity power amplifier (PA) for long-term evolution (LTE) applications at 1.8/2.1/2.3/2.5/2.6 GHz in the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm 1P6M CMOS process. The proposed PA includes a switch, which is a CMOS varactor, a driver stage, which is a CMOS resistor inverter, and a power stage, which uses a cascode structure and feedback technique. The fully integrated PA delivers 21-dBm output power in the overall band for a 50-Ω load with an average power gain of 22.98 dB.
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