利用MOS电容器的电学特性提取物理氧化物厚度

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 1900-01-01 DOI:10.1109/SISPAD.2000.871257

K. Eikyu, H. Takashino, M. Kidera, A. Teramoto, H. Umeda, K. Ishikawa, N. Kotani, M. Inuishi

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引用次数: 1

摘要

利用MOS电容器的隧穿电流特性提取了超薄氧化物的物理氧化厚度。研制了一种用于半自动提取的提取工具。该工具实现了非线性最小二乘求解器和图形用户界面。在MIDSIP-T器件模拟器中加入了隧道电流模型，作为抽采系统的核心模拟器。发现在提取厚度小于4 nm的极薄氧化物时应考虑过渡层。对各种样品进行提取后，得到统一的参数集/spl phi//sub b/=3.3 eV, m/sub c//sup *//m/sub 0/=0.41。

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Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

The physical oxide thickness of ultrathin oxides is extracted using the tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool implements a nonlinear least square solver and GUIs. A tunneling current model is incorporated into the MIDSIP-T device simulator and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, /spl phi//sub b/=3.3 eV and m/sub c//sup *//m/sub 0/=0.41, is obtained after the extraction of various samples.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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