{"title":"用于过度曝光控制的CMOS-OxRAM混合图像传感器","authors":"A.Sai Kumar, M. Sarkar, M. Suri","doi":"10.1109/IMW.2016.7495276","DOIUrl":null,"url":null,"abstract":"This paper presents a first of its kind unique application of OxRAM devices in CMOS image sensor pixels. Our proposed hybrid CMOS-OxRAM pixel circuit exploits the non-linear capacitive and resistive properties of OxRAM device to control image overexposure autonomously. HfOx based OxRAM device is used as a programmable capacitive load in a conventional 4T-APS (active pixel sensor) circuit. Our solution exploiting HfOx based OxRAM devices, improves the dynamic range of individual pixels by a factor of ~2.45 (or 7.8 dB), and capacitance density by a factor of ~5 at 180 nm node.","PeriodicalId":365759,"journal":{"name":"2016 IEEE 8th International Memory Workshop (IMW)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Hybrid CMOS-OxRAM Image Sensor for Overexposure Control\",\"authors\":\"A.Sai Kumar, M. Sarkar, M. Suri\",\"doi\":\"10.1109/IMW.2016.7495276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a first of its kind unique application of OxRAM devices in CMOS image sensor pixels. Our proposed hybrid CMOS-OxRAM pixel circuit exploits the non-linear capacitive and resistive properties of OxRAM device to control image overexposure autonomously. HfOx based OxRAM device is used as a programmable capacitive load in a conventional 4T-APS (active pixel sensor) circuit. Our solution exploiting HfOx based OxRAM devices, improves the dynamic range of individual pixels by a factor of ~2.45 (or 7.8 dB), and capacitance density by a factor of ~5 at 180 nm node.\",\"PeriodicalId\":365759,\"journal\":{\"name\":\"2016 IEEE 8th International Memory Workshop (IMW)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 8th International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2016.7495276\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2016.7495276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hybrid CMOS-OxRAM Image Sensor for Overexposure Control
This paper presents a first of its kind unique application of OxRAM devices in CMOS image sensor pixels. Our proposed hybrid CMOS-OxRAM pixel circuit exploits the non-linear capacitive and resistive properties of OxRAM device to control image overexposure autonomously. HfOx based OxRAM device is used as a programmable capacitive load in a conventional 4T-APS (active pixel sensor) circuit. Our solution exploiting HfOx based OxRAM devices, improves the dynamic range of individual pixels by a factor of ~2.45 (or 7.8 dB), and capacitance density by a factor of ~5 at 180 nm node.
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