用于先进CMOS技术节点的应变FDSOI nmosfet的优越性能和热载流子可靠性

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948801

G. Besnard, X. Garros, F. Andrieu, P. Nguyen, W. V. D. Daele, P. Reynaud, W. Schwarzenbach, D. Delprat, K. Bourdelle, G. Reimbold, S. Cristoloveanu

{"title":"用于先进CMOS技术节点的应变FDSOI nmosfet的优越性能和热载流子可靠性","authors":"G. Besnard, X. Garros, F. Andrieu, P. Nguyen, W. V. D. Daele, P. Reynaud, W. Schwarzenbach, D. Delprat, K. Bourdelle, G. Reimbold, S. Cristoloveanu","doi":"10.1109/ESSDERC.2014.6948801","DOIUrl":null,"url":null,"abstract":"The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes\",\"authors\":\"G. Besnard, X. Garros, F. Andrieu, P. Nguyen, W. V. D. Daele, P. Reynaud, W. Schwarzenbach, D. Delprat, K. Bourdelle, G. Reimbold, S. Cristoloveanu\",\"doi\":\"10.1109/ESSDERC.2014.6948801\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948801\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948801","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

比较了在双轴拉伸应变SOI衬底(sSOI)上制备的NMOS晶体管的热载流子(HC)可靠性与在标准非应变SOI衬底上制备的器件的可靠性。结果表明，基于ssoi的器件不仅在ION/IOFF方面的性能提高了10%，而且在相同的驱动电流下表现出优异的HC可靠性。这种可靠性的提高可能是由于sSOI薄膜的界面质量更好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 44th European Solid State Device Research Conference (ESSDERC)

自引率

0.00%

发文量