掺杂ZnO单晶作为一种新型激光材料

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling Pub Date : 2010-11-09 DOI:10.1109/LFNM.2010.5624172

L. Li, L. N. Demyanets

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引用次数: 0

摘要

生长ZnO:在晶片中表现出与激子复合有关的强近带边发射(380 nm自由激子;395和406 nm -激子定位在杂质中心)。最后两个波段观测到法布里-珀罗模式结构。显著增加的窄线(396 nm， Δλ ~ 3.3 nm)与EHP重组有关。

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In-doped ZnO single crystals as a novel laser material

As-grown ZnO:In crystalline plates demonstrate strong near-band-edge emission related to exciton recombination (380 nm — free excitons; 395 and 406 nm — excitons localized in the impurity centers). Fabry-Perot mode structure is observed for last two bands. Dramatically increasing narrow line (396 nm, Δλ ∼ 3.3 nm) is connected with EHP recombination.

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2010 10th International Conference on Laser and Fiber-Optical Networks Modeling

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