M. Joo, Seok-Hee Lee, Seok-Kiu Lee, Byungsu Cho, Jong-Choul Kim, S. Choi
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Novel oxynitridation technology for highly reliable thin dielectrics
A new oxynitridation technology is introduced. The oxynitride gate dielectric was grown in light wet ambient by diluting NH/sub 3/ gas in N/sub 2/O using a low pressure furnace. The oxide growth rate could be enhanced by this technique. The electrical properties of the oxide were improved by hardening of both SiO2 bulk and Si/SiO2 interface with in-situ post N/sub 2/O annealing. This technology is very promising for gate dielectrics in next generation DRAM and Flash EEPROM devices.
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