N. Hwang, G. Joo, Sang-Hwan Lee, Seong-Su Park, H. Cho, Min-Kyu Song, K. Pyun
{"title":"加速老化试验评估1.3 /spl mu/m InGaAsP/InP非冷却激光二极管的结构可靠性","authors":"N. Hwang, G. Joo, Sang-Hwan Lee, Seong-Su Park, H. Cho, Min-Kyu Song, K. Pyun","doi":"10.1109/ECTC.1996.550904","DOIUrl":null,"url":null,"abstract":"The purpose of this paper is to demonstrate reliability analysis of 1.3 /spl mu/m InGaAsP/InP MQW-PHB laser diodes (LD) for high speed optical communication systems. We have accelerated aging tests and compared the assessment of 1.3 /spl mu/m InGaAsP/InP strain-compensated MQW PBH-LD's with different numbers of quantum well (N/sub QW/) and active width (W/sub A/). The experimental results show that /spl Delta/I/sub th/ is related with W/sub A/ rather than with N/sub QW/. For the same W/sub A/, we have observed that the variation of N/sub QW/ has less effect on /spl Delta/I/sub th/ which is primarily due to the limitation of the fabrication process in controlling the uniformity and homogeneity in the MQW layer.","PeriodicalId":143519,"journal":{"name":"1996 Proceedings 46th Electronic Components and Technology Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structure-dependent reliability assessment of 1.3 /spl mu/m InGaAsP/InP uncooled laser diodes by accelerated aging test\",\"authors\":\"N. Hwang, G. Joo, Sang-Hwan Lee, Seong-Su Park, H. Cho, Min-Kyu Song, K. Pyun\",\"doi\":\"10.1109/ECTC.1996.550904\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this paper is to demonstrate reliability analysis of 1.3 /spl mu/m InGaAsP/InP MQW-PHB laser diodes (LD) for high speed optical communication systems. We have accelerated aging tests and compared the assessment of 1.3 /spl mu/m InGaAsP/InP strain-compensated MQW PBH-LD's with different numbers of quantum well (N/sub QW/) and active width (W/sub A/). The experimental results show that /spl Delta/I/sub th/ is related with W/sub A/ rather than with N/sub QW/. For the same W/sub A/, we have observed that the variation of N/sub QW/ has less effect on /spl Delta/I/sub th/ which is primarily due to the limitation of the fabrication process in controlling the uniformity and homogeneity in the MQW layer.\",\"PeriodicalId\":143519,\"journal\":{\"name\":\"1996 Proceedings 46th Electronic Components and Technology Conference\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Proceedings 46th Electronic Components and Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.1996.550904\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Proceedings 46th Electronic Components and Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1996.550904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structure-dependent reliability assessment of 1.3 /spl mu/m InGaAsP/InP uncooled laser diodes by accelerated aging test
The purpose of this paper is to demonstrate reliability analysis of 1.3 /spl mu/m InGaAsP/InP MQW-PHB laser diodes (LD) for high speed optical communication systems. We have accelerated aging tests and compared the assessment of 1.3 /spl mu/m InGaAsP/InP strain-compensated MQW PBH-LD's with different numbers of quantum well (N/sub QW/) and active width (W/sub A/). The experimental results show that /spl Delta/I/sub th/ is related with W/sub A/ rather than with N/sub QW/. For the same W/sub A/, we have observed that the variation of N/sub QW/ has less effect on /spl Delta/I/sub th/ which is primarily due to the limitation of the fabrication process in controlling the uniformity and homogeneity in the MQW layer.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
