200ghz QSA SiGe:C hbt对CD和覆盖的要求

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356557

K. van Wichelen, L. Witters, S. Van Huylenbroeck, P. Leray, D. Laidler, E. Kunnen, S. Decoutere

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引用次数: 0

摘要

在本文中，我们研究了准自对准(QSA)结构对CD变化和对准的敏感性，从而导致器件的电气性能对光刻能力提出了一系列要求。我们表明，只要在对齐策略方面采取一些预防措施，这些要求可以毫无困难地使用当前的步进和扫描工具来满足。结果表明，基极电流、电流增益和BV/sub EBO/是HBT器件中对错位最敏感的直流参数。

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Requirements on CD and overlay for 200 GHz QSA SiGe:C HBTs

In this paper, we investigate the sensitivity of the quasi self-alignment (QSA) architecture to CD variation and alignment, resulting in a set of requirements on lithography capability imposed by the electrical performance of the device. We show that these requirements can be met without difficulty using present-day step and scan tools, so long as some precautions are taken in terms of alignment strategy. We show that the base current, current gain and BV/sub EBO/ are the DC parameters of the HBT device most sensitive to misalignment.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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