缺陷接触与肖特基结特性的个案研究

Jinglong Li, C. Qi, Y. Che, Quande Zhang, Horse L. Ma, Jonathan Liu, M. Masuda, B. Liu
{"title":"缺陷接触与肖特基结特性的个案研究","authors":"Jinglong Li, C. Qi, Y. Che, Quande Zhang, Horse L. Ma, Jonathan Liu, M. Masuda, B. Liu","doi":"10.1109/IPFA.2014.6898169","DOIUrl":null,"url":null,"abstract":"Ohmic contacts must be made in any semiconductor device or integrated circuits(IC). Contact failures usually are related to high resistance or open. However, sometimes the defective contact may be Schottky character instead of ohmic contact. In this paper, a case study on such a contact failure is discussed.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A case study on the defective contact with Schottky junction character\",\"authors\":\"Jinglong Li, C. Qi, Y. Che, Quande Zhang, Horse L. Ma, Jonathan Liu, M. Masuda, B. Liu\",\"doi\":\"10.1109/IPFA.2014.6898169\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ohmic contacts must be made in any semiconductor device or integrated circuits(IC). Contact failures usually are related to high resistance or open. However, sometimes the defective contact may be Schottky character instead of ohmic contact. In this paper, a case study on such a contact failure is discussed.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898169\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

任何半导体器件或集成电路(IC)中都必须有欧姆触点。触点故障通常与高电阻或断路有关。然而,有时缺陷接触可能是肖特基特征而不是欧姆接触。本文对这种接触失效进行了实例分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A case study on the defective contact with Schottky junction character
Ohmic contacts must be made in any semiconductor device or integrated circuits(IC). Contact failures usually are related to high resistance or open. However, sometimes the defective contact may be Schottky character instead of ohmic contact. In this paper, a case study on such a contact failure is discussed.
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