Review of negative capacitance transistors

A ferroelectric material stores energy from phase transition and in doing so it lends itself to be biased at a state where its capacitance is negative [1,2]. When such a negative capacitance is added in series to the gate of a, subthreshold swing in a Field Effect Transistor (FET), it is possible to reduce the subthreshold swing below 60 mV/decade, without changing the transport physics of the FET. Not having to change the transport physics means that the ON current can be high while the supply voltage can be reduced significantly. Therefore, the negative capacitance effect has the potential to lead to very low voltage yet high performance electronic switches.