{"title":"圆柱形硅纳米线栅极周围的电子迁移率:蒙特卡罗研究","authors":"M. Ossaimee, M. El‐Sabagh, D. Selim, S. Gamal","doi":"10.1109/ICM.2010.5696144","DOIUrl":null,"url":null,"abstract":"Electron mobility in gated silicon nanowires is calculated using a Monte Carlo simulation that considers phonon and surface roughness scattering. Surface roughness scattering rates are calculated using Ando's model. The eigenenergies and eigenfunctions required for scattering rate calculation are determined by self-consistent solution of the Schrödinger and Poisson equations. The effects of size quantization and transverse electric field on electron mobility are presented and discussed.","PeriodicalId":215859,"journal":{"name":"2010 International Conference on Microelectronics","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electron mobility in gate all around cylindrical silicon nanowires: A Monte Carlo study\",\"authors\":\"M. Ossaimee, M. El‐Sabagh, D. Selim, S. Gamal\",\"doi\":\"10.1109/ICM.2010.5696144\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron mobility in gated silicon nanowires is calculated using a Monte Carlo simulation that considers phonon and surface roughness scattering. Surface roughness scattering rates are calculated using Ando's model. The eigenenergies and eigenfunctions required for scattering rate calculation are determined by self-consistent solution of the Schrödinger and Poisson equations. The effects of size quantization and transverse electric field on electron mobility are presented and discussed.\",\"PeriodicalId\":215859,\"journal\":{\"name\":\"2010 International Conference on Microelectronics\",\"volume\":\"126 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2010.5696144\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2010.5696144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electron mobility in gate all around cylindrical silicon nanowires: A Monte Carlo study
Electron mobility in gated silicon nanowires is calculated using a Monte Carlo simulation that considers phonon and surface roughness scattering. Surface roughness scattering rates are calculated using Ando's model. The eigenenergies and eigenfunctions required for scattering rate calculation are determined by self-consistent solution of the Schrödinger and Poisson equations. The effects of size quantization and transverse electric field on electron mobility are presented and discussed.
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