在45nm技术lsi中使用低通滤波器抑制单事件瞬变

T. Uemura, R. Tanabe, Y. Tosaka, S. Satoh
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引用次数: 19

摘要

在本文中,我们研究了在地面环境中使用低通滤波器(LPF)对抗单事件瞬变(SET)的最佳辐射强化设计(RHBD),包括45nm时序逻辑中针对单事件扰动(SEU)的RHBD技术。研究了三种类型的LPF的SET脉冲免疫、面积惩罚和性能惩罚。我们提出了一种SET-SEU-RHBD触发器。该触发器具有使用双传输c元件的LPF,并且仅在主锁存器上应用MNL技术。这款触发器采用45纳米技术和16格高度设计。通过加速实验和仿真,估计了触发器的缓解效率。触发器可以保护90%的SEU和52 ps的SET脉冲,且处罚低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Using Low Pass Filters in Mitigation Techniques against Single-Event Transients in 45nm Technology LSIs
In this paper, we investigate optimum radiation hardened by design (RHBD) for use against single-event transients (SET) using low-pass filters (LPF) including RHBD techniques against single-event upsets (SEU) for sequential logic in 45 -nm technology in a terrestrial environment. Three types of LPF were investigated regarding their SET pulse immunities, area penalties, and performance penalties. We proposed a flip-flop of SET-SEU-RHBD. This flip-flop has LPF using a C-element with dual transmission and applies an MNL technique only on the master latch. This flip-flop is designed with 45-nm technology and a 16-grid height. Mitigation efficiencies of the flip-flop are estimated by accelerated experiments and simulations. The flip-flop can protect 90% of SEU and 52 ps SET pulse with low penalties.
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