G. Amendola, Y. Blanchard, A. Exertier, S. Spirkovitch, G. Lu, G. Alquié
{"title":"一种CMOS自偏置电荷放大器","authors":"G. Amendola, Y. Blanchard, A. Exertier, S. Spirkovitch, G. Lu, G. Alquié","doi":"10.1109/MMICA.1999.833580","DOIUrl":null,"url":null,"abstract":"In this article a charge amplifier dedicated to the signal processing of a capacitive silicon microphone is described. One feature of this amplifier is the implementation of a self-biased technique. It is a transconductance amplifier having a very high output resistance. The current consumption is quite low (20 /spl mu/A without the bias circuit) and the dimensions are 210 /spl mu/m by 170 /spl mu/m (including all capacitors). The amplifier has been designed and fabricated in 0.8 /spl mu/m CMOS technology. Both simulation and measurement results have shown the analog memorization of DC bias voltage.","PeriodicalId":221297,"journal":{"name":"Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A CMOS, self-biased charge amplifier\",\"authors\":\"G. Amendola, Y. Blanchard, A. Exertier, S. Spirkovitch, G. Lu, G. Alquié\",\"doi\":\"10.1109/MMICA.1999.833580\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article a charge amplifier dedicated to the signal processing of a capacitive silicon microphone is described. One feature of this amplifier is the implementation of a self-biased technique. It is a transconductance amplifier having a very high output resistance. The current consumption is quite low (20 /spl mu/A without the bias circuit) and the dimensions are 210 /spl mu/m by 170 /spl mu/m (including all capacitors). The amplifier has been designed and fabricated in 0.8 /spl mu/m CMOS technology. Both simulation and measurement results have shown the analog memorization of DC bias voltage.\",\"PeriodicalId\":221297,\"journal\":{\"name\":\"Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMICA.1999.833580\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Applications (Cat. No.99EX303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMICA.1999.833580","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this article a charge amplifier dedicated to the signal processing of a capacitive silicon microphone is described. One feature of this amplifier is the implementation of a self-biased technique. It is a transconductance amplifier having a very high output resistance. The current consumption is quite low (20 /spl mu/A without the bias circuit) and the dimensions are 210 /spl mu/m by 170 /spl mu/m (including all capacitors). The amplifier has been designed and fabricated in 0.8 /spl mu/m CMOS technology. Both simulation and measurement results have shown the analog memorization of DC bias voltage.