Comparative assessment of DC/RF parameters of Metal gate and Metal Alloy gate based DG-MOS HFET

Abstract- With the advance in VLSI MOS Technology, Double Gate Metal Oxide Semiconductor Hetero Field Effect Transistors (DGMOS HFET) have emerged as a potential candidate for high speed switching applications. In this paper we have proposed a DGMOS HFET structure in which one of the metal gates has been replaced by a linearly graded binary meal alloy of Ni and Cd. The work functions of these two alloys are varied from 4.08eV to 5.01eV. Various DC and RF parameters of this metal alloy gate structure and metal gate structure of DGMOS HFETs have been found out from the 2D simulation using commercial Sentaurus TCAD tool. An extensive simulation based comparative study and analysis of overall performance of the metal gate and metal alloy gate structures have been carried out.