低功率射频应用中完全耗尽和部分耗尽SOI MOSFET的比较

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) Pub Date : 1999-10-04 DOI:10.1109/SOI.1999.819839

O. Rozeau, J. Jomaah, C. Boussey, C. Raynaud, J. Pelloie, F. Balestra

{"title":"低功率射频应用中完全耗尽和部分耗尽SOI MOSFET的比较","authors":"O. Rozeau, J. Jomaah, C. Boussey, C. Raynaud, J. Pelloie, F. Balestra","doi":"10.1109/SOI.1999.819839","DOIUrl":null,"url":null,"abstract":"During the past decade, several works have shown that SOI technologies are very promising for radiofrequency applications (Eggert et al., 1997). In this work, we compare two different types of SOI architecture, i.e. fully- and partially-depleted MOSFETs, operating at RF range and under low-voltage conditions.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Comparison between fully- and partially-depleted SOI MOSFET's for low-power radio-frequency applications\",\"authors\":\"O. Rozeau, J. Jomaah, C. Boussey, C. Raynaud, J. Pelloie, F. Balestra\",\"doi\":\"10.1109/SOI.1999.819839\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"During the past decade, several works have shown that SOI technologies are very promising for radiofrequency applications (Eggert et al., 1997). In this work, we compare two different types of SOI architecture, i.e. fully- and partially-depleted MOSFETs, operating at RF range and under low-voltage conditions.\",\"PeriodicalId\":117832,\"journal\":{\"name\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1999.819839\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819839","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

在过去的十年中，一些工作表明，SOI技术在射频应用方面非常有前途(Eggert等人，1997年)。在这项工作中，我们比较了两种不同类型的SOI架构，即完全耗尽和部分耗尽的mosfet，在RF范围和低压条件下工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Comparison between fully- and partially-depleted SOI MOSFET's for low-power radio-frequency applications

During the past decade, several works have shown that SOI technologies are very promising for radiofrequency applications (Eggert et al., 1997). In this work, we compare two different types of SOI architecture, i.e. fully- and partially-depleted MOSFETs, operating at RF range and under low-voltage conditions.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

自引率

0.00%

发文量