S. Sugou, Atushi Kameyama, Y. Miyamoto, C. Watanabe, K. Furuya, Y. Suematsu
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OMVPE GaInAsP/InP crystal growth for integrated optics
The GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is one of the key techniques for development of semiconductor integrated optics for the wavelength range of 1.1-1.7μm, where integrated lasers [1] as well as quantum well structure devices [2] can be integrated. Although there have been reports on GaInAsP/InP OMVPE [3],[4], the growth condition in relations with sharp hetero-interface and p-type dopant are not clear.
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