0.39-0.45THz对称mos变容三倍频65纳米CMOS

Z. Ahmad, Insoo Kim, K. O. Kenneth
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引用次数: 21

摘要

介绍了一种基于累积模式对称MOS变容管(SVAR)的宽带无源三倍频器。在57GHz频段测量输出功率(Pout) >-15dBm。该三倍器采用片上贴片天线,工作频率在390至456GHz之间,峰值有效各向同性辐射功率(EIRP)为-5dBm。在447GHz频段,天线增益去嵌入后,测量设置限制峰值输出和转换损耗分别为-3.2dBm和15.2dB。这是所有工作在350GHz以上的CMOS源的最高输出功率,并且可以与片上输入驱动放大器集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
0.39–0.45THz symmetric MOS-varactor frequency tripler in 65-nm CMOS
A broadband passive frequency tripler using an accumulation-mode symmetric MOS varactor (SVAR) in 65-nm bulk CMOS process is demonstrated. The measured output power (Pout) is >-15dBm over a 57GHz band. This tripler incorporating an on-chip patch antenna operates at frequencies between 390 and 456GHz, and achieves a peak Effective Isotropically Radiated Power (EIRP) of -5dBm. The measurement setup limited peak Pout and conversion loss is -3.2dBm and 15.2dB, respectively at 447GHz after antenna gain de-embedding. This is the highest reported output power for all CMOS sources operating above 350GHz and can be integrated with an on-chip input driver amplifier.
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