{"title":"0.39-0.45THz对称mos变容三倍频65纳米CMOS","authors":"Z. Ahmad, Insoo Kim, K. O. Kenneth","doi":"10.1109/RFIC.2015.7337758","DOIUrl":null,"url":null,"abstract":"A broadband passive frequency tripler using an accumulation-mode symmetric MOS varactor (SVAR) in 65-nm bulk CMOS process is demonstrated. The measured output power (Pout) is >-15dBm over a 57GHz band. This tripler incorporating an on-chip patch antenna operates at frequencies between 390 and 456GHz, and achieves a peak Effective Isotropically Radiated Power (EIRP) of -5dBm. The measurement setup limited peak Pout and conversion loss is -3.2dBm and 15.2dB, respectively at 447GHz after antenna gain de-embedding. This is the highest reported output power for all CMOS sources operating above 350GHz and can be integrated with an on-chip input driver amplifier.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"0.39–0.45THz symmetric MOS-varactor frequency tripler in 65-nm CMOS\",\"authors\":\"Z. Ahmad, Insoo Kim, K. O. Kenneth\",\"doi\":\"10.1109/RFIC.2015.7337758\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband passive frequency tripler using an accumulation-mode symmetric MOS varactor (SVAR) in 65-nm bulk CMOS process is demonstrated. The measured output power (Pout) is >-15dBm over a 57GHz band. This tripler incorporating an on-chip patch antenna operates at frequencies between 390 and 456GHz, and achieves a peak Effective Isotropically Radiated Power (EIRP) of -5dBm. The measurement setup limited peak Pout and conversion loss is -3.2dBm and 15.2dB, respectively at 447GHz after antenna gain de-embedding. This is the highest reported output power for all CMOS sources operating above 350GHz and can be integrated with an on-chip input driver amplifier.\",\"PeriodicalId\":121490,\"journal\":{\"name\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2015.7337758\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337758","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
0.39–0.45THz symmetric MOS-varactor frequency tripler in 65-nm CMOS
A broadband passive frequency tripler using an accumulation-mode symmetric MOS varactor (SVAR) in 65-nm bulk CMOS process is demonstrated. The measured output power (Pout) is >-15dBm over a 57GHz band. This tripler incorporating an on-chip patch antenna operates at frequencies between 390 and 456GHz, and achieves a peak Effective Isotropically Radiated Power (EIRP) of -5dBm. The measurement setup limited peak Pout and conversion loss is -3.2dBm and 15.2dB, respectively at 447GHz after antenna gain de-embedding. This is the highest reported output power for all CMOS sources operating above 350GHz and can be integrated with an on-chip input driver amplifier.