为脉冲功率应用优化的高压igbt

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI:10.1109/PPC.2003.1277676

A. Golland, F. Wakeman, G. Li

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引用次数: 0

摘要

提出了一种针对脉冲功率应用进行优化的新型高压绝缘栅双极晶体管(igbt)。该装置的额定阻断电压高达5.2 kV，基于穿孔(PT)技术，并经过优化，可最大限度地提高正向跨导。与传统的IGBT技术相比，这种优化允许该设备在非常高的脉冲集电极电流水平下运行。然后讨论了基于上述器件的全集成五端开关组件的设计、结构和性能。

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Optimised high voltage IGBTs for pulsed power applications

A new range of high voltage Insulated Gate Bi-polar Transistors (IGBTs) is presented which have been optimised for pulsed power applications. The devices, rated for blocking voltages up to 5.2 kV, are based on punch through (PT) technology and have been optimised to maximise forward transconductance. This optimisation allows the device to operate at very high levels of pulsed collector current when compared to conventional IGBT technology. The design, construction and performance of a fully integrated five terminal switch assembly based on the abovementioned device is then discussed.

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Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472)

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