用于抑制地门控集成电路模式转换噪声的睡眠信号摆率调制

Hailong Jiao, V. Kursun
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引用次数: 8

摘要

在多阈值CMOS (MTCMOS)电路中,从SLEEP模式到ACTIVE模式转换过程中产生的地弹跳噪声是一个重要的可靠性问题。本文探讨了单相和多相睡眠信号摆率调制技术,以有效抑制MTCMOS电路中的地跳噪声。在等噪声约束下,采用UMC 80nm CMOS技术对不同MTCMOS电路的再激活时间、再激活能量、泄漏功耗和布局面积进行了表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sleep signal slew rate modulation for mode transition noise suppression in ground gated integrated circuits
Ground bouncing noise produced during SLEEP to ACTIVE mode transitions is an important reliability concern in multi-threshold CMOS (MTCMOS) circuits. Single-phase and multi-phase sleep signal slew rate modulation techniques are explored in this paper to drastically suppress ground bouncing noise in MTCMOS circuits. Reactivation time, reactivation energy, leakage power consumption, and layout area of different MTCMOS circuits are characterized under an equi-noise constraint with a UMC 80nm CMOS technology.
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