{"title":"无变容体,可调谐LC-VCO微波频率在0.25 μm SiGe BiCMOS技术","authors":"H. Veenstra, E. van der Heijden","doi":"10.1109/BIPOL.2007.4351838","DOIUrl":null,"url":null,"abstract":"Many LC-VCOs use a cross-coupled differential pair as active negative resistance. The cross-coupled differential pair realizes un damping for frequencies up to fcross. An active negative resistance can also be realized based on a capacitively loaded emitter follower. Such a topology enables higher oscillation frequencies, and is therefore more suited for microwave frequencies. Moreover, by realizing the capacitive load from the input capacitance of a second, resistively loaded emitter follower, the negative resistance and output signal buffering functions can be combined. The varactor typically dominates the losses of the LC-tank at microwave frequencies. This paper demonstrates an LC-VCO based on a capacitively loaded emitter follower, with frequency tuning realized via the collector-base capacitance of the first emitter followers connected to the inductor. No additional varactor is required. The oscillator, implemented in a 0.25μm SiGe:C BiCMOS technology, achieves a measured frequency tuning range from 53.2 to 57.6 GHz and a phase noise of -100 dBc/Hzat 1 MHz from the carrier.","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Varactorless, tuneable LC-VCO for microwave frequencies in a 0.25 μm SiGe BiCMOS technology\",\"authors\":\"H. Veenstra, E. van der Heijden\",\"doi\":\"10.1109/BIPOL.2007.4351838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Many LC-VCOs use a cross-coupled differential pair as active negative resistance. The cross-coupled differential pair realizes un damping for frequencies up to fcross. An active negative resistance can also be realized based on a capacitively loaded emitter follower. Such a topology enables higher oscillation frequencies, and is therefore more suited for microwave frequencies. Moreover, by realizing the capacitive load from the input capacitance of a second, resistively loaded emitter follower, the negative resistance and output signal buffering functions can be combined. The varactor typically dominates the losses of the LC-tank at microwave frequencies. This paper demonstrates an LC-VCO based on a capacitively loaded emitter follower, with frequency tuning realized via the collector-base capacitance of the first emitter followers connected to the inductor. No additional varactor is required. The oscillator, implemented in a 0.25μm SiGe:C BiCMOS technology, achieves a measured frequency tuning range from 53.2 to 57.6 GHz and a phase noise of -100 dBc/Hzat 1 MHz from the carrier.\",\"PeriodicalId\":356606,\"journal\":{\"name\":\"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2007.4351838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2007.4351838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Varactorless, tuneable LC-VCO for microwave frequencies in a 0.25 μm SiGe BiCMOS technology
Many LC-VCOs use a cross-coupled differential pair as active negative resistance. The cross-coupled differential pair realizes un damping for frequencies up to fcross. An active negative resistance can also be realized based on a capacitively loaded emitter follower. Such a topology enables higher oscillation frequencies, and is therefore more suited for microwave frequencies. Moreover, by realizing the capacitive load from the input capacitance of a second, resistively loaded emitter follower, the negative resistance and output signal buffering functions can be combined. The varactor typically dominates the losses of the LC-tank at microwave frequencies. This paper demonstrates an LC-VCO based on a capacitively loaded emitter follower, with frequency tuning realized via the collector-base capacitance of the first emitter followers connected to the inductor. No additional varactor is required. The oscillator, implemented in a 0.25μm SiGe:C BiCMOS technology, achieves a measured frequency tuning range from 53.2 to 57.6 GHz and a phase noise of -100 dBc/Hzat 1 MHz from the carrier.