无变容体,可调谐LC-VCO微波频率在0.25 μm SiGe BiCMOS技术

H. Veenstra, E. van der Heijden
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引用次数: 9

摘要

许多lc - vco使用交叉耦合差分对作为有源负电阻。交叉耦合差分对实现了直至交叉频率的无阻尼。有源负电阻也可以基于电容负载的发射极从动器来实现。这样的拓扑结构可以实现更高的振荡频率,因此更适合微波频率。此外,通过从第二个电阻负载的发射极从动器的输入电容实现容性负载,可以将负电阻和输出信号缓冲功能结合起来。变容管通常控制着LC-tank在微波频率下的损耗。本文演示了一种基于电容负载的发射极从动器的LC-VCO,通过连接到电感的第一个发射极从动器的集电极基电容实现频率调谐。不需要额外的变容器。该振荡器采用0.25μm SiGe:C BiCMOS技术实现,测量频率调谐范围为53.2至57.6 GHz,载波相位噪声为-100 dBc/Hzat 1 MHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Varactorless, tuneable LC-VCO for microwave frequencies in a 0.25 μm SiGe BiCMOS technology
Many LC-VCOs use a cross-coupled differential pair as active negative resistance. The cross-coupled differential pair realizes un damping for frequencies up to fcross. An active negative resistance can also be realized based on a capacitively loaded emitter follower. Such a topology enables higher oscillation frequencies, and is therefore more suited for microwave frequencies. Moreover, by realizing the capacitive load from the input capacitance of a second, resistively loaded emitter follower, the negative resistance and output signal buffering functions can be combined. The varactor typically dominates the losses of the LC-tank at microwave frequencies. This paper demonstrates an LC-VCO based on a capacitively loaded emitter follower, with frequency tuning realized via the collector-base capacitance of the first emitter followers connected to the inductor. No additional varactor is required. The oscillator, implemented in a 0.25μm SiGe:C BiCMOS technology, achieves a measured frequency tuning range from 53.2 to 57.6 GHz and a phase noise of -100 dBc/Hzat 1 MHz from the carrier.
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