弯曲成球形的柔性硅器件的力学行为

K. Tékaya, M. Fendler, Karim Inal, Elisabeth Massoni, H. Ribot
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引用次数: 16

摘要

自2000年代初以来,可折叠、可拉伸和柔性电子产品的兴趣不断增加。它的应用范围从基于oled的显示器、仿生探测器到“表皮电子学”。圆柱曲率主要是通过电子器件中许多3点和4点弯曲变化来研究的。然而,球面曲率没有得到很好的解决,特别是对于单片方法。本文对薄硅片在球形支架上的弹性变形进行了仿真和实验研究。支架可以有凹形或凸形。芯片是一个10 × 10平方毫米的正方形。厚度为50、25或15 μm。仿真分三个步骤进行。首先,通过收敛研究和与3D模型和文献的比较,验证了壳模型的使用。然后,考虑了各向异性弹性行为(单晶)的影响。在给定的膨胀试验条件下,各向同性和各向异性硅模拟得到了相似的变形。最后,利用壳体模型和各向异性规律完成了球面成形。实验数据是通过在压力机中弯曲不同厚度的硅薄板在不同半径的支架上得到的。实现了实验结果与计算结果的比较。我们发现凹形和凸形都有相似的宏观变形。研究了切屑厚度和施加压力对特征褶皱和平面振幅的影响。具有数百MPa变化的非均匀应力分布可以解释弯曲切屑与完美球形夹头之间观察到的差异。薄弯曲硅基器件的电学和光学有源层的应力水平会影响器件的性能。一个热辐射计上的数值例子给出了应力引起的电阻率变化超过10%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mechanical behavior of flexible silicon devices curved in spherical configurations
Foldable, stretchable and flexible electronics is of constant increasing interest since the early 2000's. Its applications spread from OLED-based displays, bio-inspired detectors and “epidermal electronics”. Cylindrical curvature is largely studied through many 3 points and 4 points bending variations in electronic devices. However spherical curvature is poorly addressed, especially for monolithic approach. In this paper, a simulation and experiments of the elastic deformation of a thin silicon chip on a spherical holder are presented. The holder can have a concave or a convex shape. The chip is a square of 10 by 10 mm2. Its thickness is 50, 25 or 15 μm. The simulation is performed in 3 steps. First, the use of a shell model is validated by a convergence study and by a comparison with a 3D model and the literature. Then, the influence of the anisotropic elastic behavior (single crystal) is considered. In a given bulge test condition, isotropic and anisotropic silicon simulation gave similar deformations. At the end, the spherical forming is accomplished with a shell model and an anisotropic law. Experimental data is obtained by curving thin silicon plates of various thicknesses on different radii holders in a press. The comparison between experimental and computed results is realized. We found similar macroscopic deformations for both concave and convex shapes. The influence of chip thickness and applied pressure is studied on characteristic folds and flat part amplitudes. A heterogeneous stress distribution with hundreds of MPa variations can explain the difference observed between curved chips and perfect spherical holders. The stress level in electrical and optical active layers of thin curved silicon-based devices may affect their properties. A numerical example on a bolometer gives a stress-induced resistivity variation over 10%.
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